irfz20/IRFZ22 hexfet ? transistors www.artschip.com 1 50 volt, 0.1 ohm hexfet to-220ab plastic package the hexfet technology has expanded its product base to serve the low voltage, very low rds(on) mosfet transistor requirements, international rectifier?s hi ghly efficient geometry and unique proces sing of the hexfet have been combined to create the lowest on resistance per device performance, in addition to this featur e all hexfets have documented reliability and parts per million quality i the hexfet transistors also offer all of the well established adv antages of mosfets such as volt age control, very fast switchin g, ease of paralleling, and temperature st ability of the electrical parameters. they are well suited for applications such as switching power supplies, motor controls, invert ers, choppers, audio are operated from low voltage batteries, such as automotive, portable equipment, etc. product summary part number v ds r ds(on) i d irfz20 50v 0.10 ? 15a IRFZ22 50v 0.12 ? 14a features: extremely low r ds(on) compact plastic package fast switching low drive current ease of paralleling excellent temperature stability parts per million quality
irfz20/IRFZ22 hexfet ? transistors www.artschip.com 2 absolute maximum ratings parameter irfz20 IRFZ22 units v ds drain-source voltage ? 50 50 v v dgr drain-gate voltage (r gs = 20k ? ) 50 50 v i d @t c =25 continuous drain current 15 14 a i d @ tc=100 continuous drain current 10 9.0 a i dm pulsed drain current 60 56 a v gs gate ?source voltage 20 v p d @ tc=25 max. power dissipation 40 (see fig. 14) w linear derating factor 0.32 (see fig. 14) w/k i lm inductive current, clamped (see fig. 15 and 16) l=100h a 60 56 t j ts t g operating junction and storage temperature range -56 to 150 lead temperature 300 (0.063 in. (1.6mm) from case for 10s) electrical characteristics @ tc=25 (unless otherwise specified) parameter type min. t yp. max. units test conditions irfz20 50 - - v bv dss drain-source breakdown voltage IRFZ22 50 - - v v gs =0v i d =250 a v gs(th) gate threshold voltage all 2.0 - 4.0 v v ds =v gs , i d =250 a i gss gate-source leakage forward all - - 500 na v gs =20v i gss gate-source leakage reverse all - - -500 na v gs =-20v irfz20 - - 250 a v ds =max. rating, v gs =0v i dss zero gate voltage drain current IRFZ22 - - 1000 a v ds =max. rating x 0.8, v gs =0v, tc=125 irfz20 15 - - a r ds(on) static drain-source on-state resistance ? IRFZ22 14 - - a v ds >i d(on) x r ds(on)max , v gs =10v gfs forward transconductance ? all - 0.080 0.100 ? ciss input capacitance all - 0.110 0.120 ? v gs =10v, f d =9.0a coss output capacitance all 5.0 6.0 - s( ? ) v ds >i d(on) x r ds(on)max , v gs =9.0v crss reverse transfer capacitance all - 560 850 pf td(on) turn-on delay time all - 250 350 pf tr rise time all - 60 100 pf v gs =0v, v ds =25v, f =1.0mhz see fig. 10 td(off) turn-off delay time all - 15 30 ns tf fall time all - 45 90 ns qg total gate charge (gate-source plus gate-drain) all - 20 40 nc qgs gate-source charge all - 15 30 nc v dd 25v, i d =9.0a, zo=50 ? see fig. 17 (mosfet switching times are essentially independent of operating temperature.) qgd gate ? drain (?millar?) charge all - 12 17 nc - 9.0 - nc l d internal drain inductance all - 3.0 - nc vgs=10v, id=20a, vds=0.8max. rating. see fig. 18 for test circuit, (gate charge is exxentially independent of opwerting temperature.) ls internal source inductance all - 3.5 - nh measured from the contact screw on tab to center of dia ls - 4.5 - nh measured from the drain lead, 6mm (0.25 in.) from package to center of die. - 75 - nh measured from the source lead, 6mm (0.25in.) from package to source bonding pad. modified mosfet symbol showing the internal device inductances.
irfz20/IRFZ22 hexfet ? transistors www.artschip.com 3 thermal resistance r thjc junction-to-case all - - 3.12 k/w r thcs case-to-sink all - 1.0 - k/w mounting surface flat, smooth, and greased. r thja junction-to-ambient all - - 80 k/w typical socket mount source-drain diode ratings and characteristics irfz20 - - 15 a is continuous source current (body diode) IRFZ22 - - 14 a irf20 - - 60 a i sm pulse source current (body diode) irf22 - - 56 a modified mosfet symbol showing the integral reverse p-n junction rectifier. irf20 - - 1.5 v tc=25 , i s =15a, v gs =0v v sd diode forward voltage irf22 - - 1.4 v tc=25 , i s =14a, v gs =0v t ff reverse recovery time all - 100 - ns t j =150 , i f =15a, di f /dt=100a/s q rr reverse recovered charge all - 0.4 - c t j =150 , i f =15a, di f /dt=100a/s ton forward turn-on time all intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s +l d ? t j =25 to 150 . ? pulse test: pulse width 300s, duty cycle 2%. repetitive rating: pulse width limit ed by max. junction temperature. see transient impedance curve (fig. 5). k/w = /w w/k=w/ fig. 1-typical output characteristics fig.3 ?typical saturation characteristics fig. 2 ?typical transfer characteristics fig. 4 ? maximum safe operating area
irfz20/IRFZ22 hexfet ? transistors www.artschip.com 4 fig. 5- maximum effective transient thermal impedance, junction-to-case vs. pulse duration fig. 6 typical transconductance vs. drain current fig. 8 ? breakdown voltage vs. temperature fig. 7 typical source-drain diode forward voltage fig.9 ? normalized on- resistance vs. temperature
irfz20/IRFZ22 hexfet ? transistors www.artschip.com 5 fig. 10 ?typical capacitance vs. drain-to-source voltage fig. 12 ? typical on-resistance vs. drain current fig.14 ?power vs. temperature derating curve fig. 11 ? typical gate charge vs. gate-to-source voltage fig. 15 ?clamped inductive test circuit fig. 16 ? clamped inductive waveforms
irfz20/IRFZ22 hexfet ? transistors www.artschip.com 6 fig. 17 ? switching time test circuit fig. 19 ? typical time to accumulated 1% failure fig. 18-gate charge test circuit fig. 20 ? typical high temperature reverse bias (htrb) failure rate
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